Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2014
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4901072